Part Number | NSBA123JDXV6T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2PNP PREBIAS 0.5W SOT563 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Image |
NSBA123JDXV6T1G
ONSEMICON
40951
0.29
ATLANTIC TECHNOLOGY LIMITED
NSBA123JDXV6T1G
ON/ST
3260
1.46
ONSTAR ELECTRONICS CO., LIMITED
NSBA123JDXV6T1G
ON/CMD
8000
2.63
MY Group (Asia) Limited
NSBA123JDXV6T1G
ON/SANYO
92000
3.8
Yingxinyuan INT'L (Group) Limited
NSBA123JDXV6T1G
ONSEM
62500
4.97
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED