Part Number | NSBA123EF3T5G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS DUAL PNP |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 254mW |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Supplier Device Package | SOT-1123 |
Image |
NSBA123EF3T5G
ONSEMICON
30000
0.94
Superior Electronics Limited
NSBA123EF3T5G
ON/ST
8000
2.2475
MY Group (Asia) Limited
NSBA123EF3T5G
ON/CMD
3260
3.555
ONSTAR ELECTRONICS CO., LIMITED
NSBA123JDXV6T5
ON/SANYO
8000
4.8625
HK Hongkai Electronics Limited
NSBA123JDXV6T5G
ONSEM
12500
6.17
HK TWO L ELECTRONIC LIMITED