Part Number | NJVNJD35N04G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 350V 4A DPAK-4 |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 2A |
Current - Collector Cutoff (Max) | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V |
Power - Max | 45W |
Frequency - Transition | 90MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK-3 |
Image |
NJVNJD35N04G
ONSEMICON
750
1.7
Hong Kong Yulu International Limited
NJVNJD35N04G
ON/ST
4569
2.7225
ONSTAR ELECTRONICS CO., LIMITED
NJVNJD35N04G
ON/CMD
55200
3.745
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NJVNJD35N04G
ON/SANYO
57000
4.7675
N&S Electronic Co., Limited
NJVNJD35N04G
ONSEM
6048
5.79
Viassion Technology Co., Limited