Part Number | NJVMJD112T4G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 100V 2A DPAK |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK-3 |
Image |
NJVMJD112T4G
ONSEMICON
5000
1.84
Shenzhen Dachao Microelectronics Technology Co., Ltd.
NJVMJD112T4G
ON/ST
55200
2.4975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NJVMJD112T4G
ON/CMD
35800
3.155
CIS Ltd (CHECK IC SOLUTION LIMITED)
NJVMJD112T4G
ON/SANYO
30000
3.8125
Redstar Electronic Limited
NJVMJD112T4G
ONSEM
176512
4.47
Cicotex Electronics (HK) Limited