Part Number | NGTB50N60L2WG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 600V 50A TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 50A |
Power - Max | 500W |
Switching Energy | 800µJ (on), 600µJ (off) |
Input Type | Standard |
Gate Charge | 310nC |
Td (on/off) @ 25°C | 110ns/270ns |
Test Condition | 400V, 50A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 67ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB50N60L2WG
ONSEMICON
9277
0.95
MY Group (Asia) Limited
NGTB50N60L2WG
ON/ST
9109
1.9875
ONSTAR ELECTRONICS CO., LIMITED
NGTB50N60L2WG
ON/CMD
6452
3.025
VBsemi Electronics Co., Limited
NGTB50N60L2WG
ON/SANYO
5959
4.0625
N&S Electronic Co., Limited
NGTB50N60L2WG
ONSEM
7464
5.1
HK Techlink Technology Co.,LIMITED