Part Number | NGTB50N120FL2WG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 100A 535W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
Power - Max | 535W |
Switching Energy | 4.4mJ (on), 1.4mJ (off) |
Input Type | Standard |
Gate Charge | 311nC |
Td (on/off) @ 25°C | 118ns/282ns |
Test Condition | 600V, 50A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 256ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB50N120FL2WG
ONSEMICON
1874
0.07
HONGKONG KUONGSHUN ELECTRONIC LIMITED
NGTB50N120FL2WG
ON/ST
2698
0.695
Hong Kong Yulu International Limited
NGTB50N120FL2WG
ON/CMD
2635
1.32
HK HEQING ELECTRONICS LIMITED
NGTB50N120FL2WG
ON/SANYO
7354
1.945
ONSTAR ELECTRONICS CO., LIMITED
NGTB50N120FL2WG
ONSEM
3742
2.57
CIS Ltd (CHECK IC SOLUTION LIMITED)