Description
NGTB40N135IHRWG . IGBT with Monolithic Free. Wheeling Diode. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop Apr 28, 2014 NGTB40N135IHRWG . Test: Conditions: Interval: Results. Autoclave. Ta =121 C RH=100% 15 psig. 96 hrs. 0/80. TC. Ta = -65 C to 150 C. NGTB40N135IHRWG . Pb-free. Halide free. Active. 1350. 40. 2.4. 2.3. 1.3. 234. 394. Yes. TO-. 247. For more information please contact your local sales support
Part Number | NGTB40N135IHRWG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1350V 80A 394W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1350V |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 40A |
Power - Max | 394W |
Switching Energy | 1.3mJ (off) |
Input Type | Standard |
Gate Charge | 234nC |
Td (on/off) @ 25°C | -/250ns |
Test Condition | 600V, 40A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB40N135IHRWG
ONSEMICON
13600
0.34
CIS Ltd (CHECK IC SOLUTION LIMITED)
NGTB40N135IHRWG
ON/ST
180
1.1825
SUNTOP SEMICONDUCTOR CO., LIMITED
NGTB40N135IHRWG
ON/CMD
6000
2.025
ZY (HK) TECHNOLOGY LIMITED
NGTB40N135IHRWG
ON/SANYO
30000
2.8675
E-Solution Technology Co.,Limited
NGTB40N135IHRWG
ONSEM
52
3.71
FLOWER GROUP(HK)CO.,LTD