Part Number | NGTB30N120L2WG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 60A 534W TO247 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 60A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
Power - Max | 534W |
Switching Energy | 4.4mJ (on), 1.4mJ (off) |
Input Type | Standard |
Gate Charge | 310nC |
Td (on/off) @ 25°C | 116ns/285ns |
Test Condition | 600V, 30A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 450ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB30N120L2WG
ONSEMICON
1288
0.41
Finestock Electronics HK Limited
NGTB30N120L2WG
ON/ST
8786
1.2675
Ysx Tech Co., Limited
NGTB30N120L2WG
ON/CMD
1077
2.125
CIS Ltd (CHECK IC SOLUTION LIMITED)
NGTB30N120L2WG
ON/SANYO
1506
2.9825
HONG KONG HORNG SHING LIMITED
NGTB30N120L2WG
ONSEM
3340
3.84
Yingxinyuan INT'L (Group) Limited