Description
NGTB15N120LWG . IGBT. This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides.
Part Number | NGTB15N120LWG |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | ON Semiconductor |
Description | IGBT 1200V 30A 156W TO247-3 |
Series | - |
Packaging | Tube |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 30A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
Power - Max | 229W |
Switching Energy | 2.1mJ (on), 560µJ (off) |
Input Type | Standard |
Gate Charge | 160nC |
Td (on/off) @ 25°C | 72ns/165ns |
Test Condition | 600V, 15A, 15 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Image |
NGTB15N120LWG
ONSEMICON
180
1.01
Dan-Mar Components Inc.
NGTB15N120LWG
ON/ST
1280
2.075
Yingxinyuan INT'L (Group) Limited
NGTB15N120LWG
ON/CMD
43000
3.14
SUNTOP SEMICONDUCTOR CO., LIMITED
NGTB15N120LWG
ON/SANYO
20000
4.205
Finestock Electronics HK Limited
NGTB15N120LWG
ONSEM
3000
5.27
ONSTAR ELECTRONICS CO., LIMITED