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Description
DATASHEET detailed ordering, marking and shipping information on page 6 of this data sheet. ORDERING AND MARKING INFORMATION. NDF06N60ZG,. NDF06N60ZH . NDF06N60ZH . Product Preview. N-Channel Power MOSFET. 600 V, 1.2 W. Features. Low ON Resistance. Low Gate Charge. 100% Avalanche Tested. Nov 12, 2014 NDF06N60ZH . NDF08N50ZH. NDF10N60ZH. NDF11N50ZH. With this change the following devices will require a modification to the case e. NDF06N60ZG. Pb-free. Halide free. Active. N-. Cha nne l. Sin gle. 600 30. 4.5. 7.1. 35. 120. 0. 31. 17. 2. 923 106 23. TO-. 220. FU. LLP. AK-. 3. NDF06N60ZH . Sep 25, 2014 NDF02N60ZH. NDF03N60ZH. NDF08N60ZH. NDF04N60ZH. NDF05N50ZH. NDF06N60ZH . NDF08N50ZH. NDF10N60ZH. NDF11N50ZH.
| Part Number | NDF06N60ZH |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 600V 7.1A TO220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1107pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
NDF06N60ZH
ONSEMICON
6000
1.65
ZY (HK) TECHNOLOGY LIMITED
NDF06N60ZH
ON/ST
220360
2.57
Cinty Int'l (HK) Industry Co., Limited
NDF06N60ZH
ON/CMD
419
3.49
Yingxinyuan INT'L (Group) Limited
NDF06N60ZH
ON/SANYO
553538
4.41
Cicotex Electronics (HK) Limited
NDF06N60ZH
ONSEM
11086
5.33
CIS Ltd (CHECK IC SOLUTION LIMITED)
