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Description
D (2). S (3). See detailed ordering, marking and shipping information on page 6 of this data sheet. ORDERING AND MARKING INFORMATION. NDF06N60ZG ,. Nov 12, 2014 This Update Notification is issued to correct the current assembly site for Mesa Ultrafast Rectifier as stated in FPCN20656. FPCN20656 Aug 13, 2013 This device is an N-channel Zener-protected. Power MOSFET developed using. STMicroelectronics SuperMESH technology, achieved DESCRIPTION. The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to Mar 20, 2012 This device is an N-channel Zener-protected. Power MOSFET developed using. STMicroelectronics SuperMESH technology, achieved
| Part Number | NDF06N60ZG |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 600V 7.1A TO-220FP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1107pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
NDF06N60ZG
ONSEMICON
5104
0.5
HK HEQING ELECTRONICS LIMITED
NDF06N60ZG
ON/ST
9201
1.5125
ONSTAR ELECTRONICS CO., LIMITED
NDF06N60ZG
ON/CMD
560084
2.525
Cicotex Electronics (HK) Limited
NDF06N60ZG
ON/SANYO
9500
3.5375
Belt (HK) Electronics Co
NDF06N60ZG MOS
ONSEM
7604
4.55
CIS Ltd (CHECK IC SOLUTION LIMITED)
