Part Number | NDD60N900U1-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 5.9A IPAK-4 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 74W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NDD60N900U1-1G
ONSEMICON
3000
1.1
ONSTAR ELECTRONICS CO., LIMITED
NDD60N900U1-1G
ON/ST
6
1.8775
CHIPSMALL LIMITED
NDD60N900U1-1G
ON/CMD
1000
2.655
MY Group (Asia) Limited
NDD60N900U1-1G
ON/SANYO
75
3.4325
HONGKONG KUONGSHUN ELECTRONIC LIMITED
NDD60N360U1T4G
ONSEM
1950
4.21
Bonase Electronics (HK) Co., Limited