Part Number | NDD60N550U1-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 8.2A IPAK-4 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NDD60N550U1-1G
ONSEMICON
16000
0.57
Finestock Electronics HK Limited
NDD60N550U1-1G
ON/ST
7441
1.0875
Viassion Technology Co., Limited
NDD60N550U1-1G
ON/CMD
21000
1.605
CIS Ltd (CHECK IC SOLUTION LIMITED)
NDD60N550U1-1G
ON/SANYO
35800
2.1225
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NDD60N550U1-1G
ONSEM
6542
2.64
ONSTAR ELECTRONICS CO., LIMITED