Part Number | NDD01N60-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 600V 1.5A IPAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 46W (Tc) |
Rds On (Max) @ Id, Vgs | 8.5 Ohm @ 200mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
NDD01N60-1G
ONSEMICON
1000
1.39
MY Group (Asia) Limited
NDD01N60-1G
ON/ST
3260
2.5975
ONSTAR ELECTRONICS CO., LIMITED
NDD01N60T4G
ON/CMD
1000
3.805
MY Group (Asia) Limited
NDD01N60T4G
ON/SANYO
50000
5.0125
Yingxinyuan INT'L (Group) Limited
NDD01N60T4G
ONSEM
3260
6.22
ONSTAR ELECTRONICS CO., LIMITED