Part Number | NDC652P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET P-CH 30V 2.4A SSOT6 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,6 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
NDC652P
ONSEMICON
9000
1.38
Pivot Technology Co., Ltd.
NDC652P_NL
ON/ST
920
2.375
KYO Inc.
NDC652P
ON/CMD
12000
3.37
Belt (HK) Electronics Co
NDC652P
ON/SANYO
376868
4.365
Cicotex Electronics (HK) Limited
NDC652P
ONSEM
2000
5.36
CIS Ltd (CHECK IC SOLUTION LIMITED)