Part Number | NDBA180N10BT4H |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 180A DPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6950pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 50A, 15V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
NDBA180N10BT4H
ONSEMICON
16000
1.82
Finestock Electronics HK Limited
NDBA180N10BT4H
ON/ST
675
3.1325
HK HEQING ELECTRONICS LIMITED
NDBA180N10BT4H
ON/CMD
8741
4.445
ONSTAR ELECTRONICS CO., LIMITED
NDBA180N10BT4H
ON/SANYO
1000
5.7575
MY Group (Asia) Limited
NDBA180N10BT4H
ONSEM
50000
7.07
Yingxinyuan INT'L (Group) Limited