Description
NCV308SNADJT1G *. Active. 0.405 V. VDJ. NCP308SN090T1G. Active. 0.84 V. 0.9 V. 090. NCP308SN120T1G. Active. 1.12 V. 1.2 V. 120. NCP308SN125T1G. NCV308SNADJT1G . AEC. Qualified. PPAP. Capable. Pb-free. Halide free. Active . 1. 5.5. 0.405 min. 1.6. Low. Yes. Yes. No. TSOP-6. For more information
Part Number | NCV308SNADJT1G |
Brand | ON Semiconductor |
Image |
Hot Offer
NCV308SNADJT1G
ONSEMICON
3270
0.79
MINGERDA ELECTRONICS (HK) LIMITED
NCV308SNADJT1G
ON/ST
6000
2.2475
Shenzhen WORLDYICK Technology Co.,Ltd.
NCV308SNADJT1G
ON/CMD
50000
3.705
HEDEYI ELECTRONIC (HK) CO.,LIMITED
NCV308SNADJT1G
ON/SANYO
3270
5.1625
LDY International Electronics (HK) Co.,Limited
NCV308SNADJT1G
ONSEM
3270
6.62
Noble Technology (HK) Company Limited