Part Number | MUN5312DW1T2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS NPN/PNP PREBIAS SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 385mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MUN5312DW1T2G
ONSEMICON
3814
0.11
Hong Kong Capital Industrial Co.,Ltd
MUN5312DW1T2G
ON/ST
5696
1.2525
CIS Ltd (CHECK IC SOLUTION LIMITED)
MUN5312DW1T2G
ON/CMD
6790
2.395
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN5312DW1T2G
ON/SANYO
4943
3.5375
SUMMER TECH(HK) LIMITED
MUN5312DW1T2G
ONSEM
608
4.68
Shenzhen hsw Technology Co., Ltd