Part Number | MUN5112DW1T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS 2PNP PREBIAS 0.25W SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
MUN5112DW1T1G
ONSEMICON
6000
1.06
KDH SEMICONDUCTOR CO., LIMITED
MUN5112DW1T1G
ON/ST
35200
2.17
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN5112DW1T1G
ON/CMD
17000
3.28
CIS Ltd (CHECK IC SOLUTION LIMITED)
MUN5112DW1T1G
ON/SANYO
5970
4.39
ONSTAR ELECTRONICS CO., LIMITED
MUN5112DW1T1G
ONSEM
24000
5.5
Yingxinyuan INT'L (Group) Limited