Part Number | MUN2235T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 338MW SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 47k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SC-59-3 |
Image |
MUN2235T1G
ONSEMICON
8000
1.25
MY Group (Asia) Limited
MUN2235T1G
ON/ST
30000
2.5275
Hong Kong Fly Bird Technology Limited
MUN2235T1G
ON/CMD
3260
3.805
ONSTAR ELECTRONICS CO., LIMITED
MUN2235T1G
ON/SANYO
9000
5.0825
SUMMER TECH(HK) LIMITED
MUN2235T1G
ONSEM
3000
6.36
HONGKONG LINK E-TECHNOLOGY CO., LIMITED