Part Number | MUN2230T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 338MW SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 338mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Image |
MUN2230T1G
ONSEMICON
503
1.9
Zhenxing Yuan Electronics Co., Limited
MUN2230T1G
ON/ST
6655
2.8175
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN2230T1G
ON/CMD
1127
3.735
ONSTAR ELECTRONICS CO., LIMITED
MUN2230T1G
ON/SANYO
582
4.6525
Viassion Technology Co., Limited
MUN2230T1G
ONSEM
8431
5.57
Bonase Electronics (HK) Co., Limited