Part Number | MUN2216T1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 338MW SC59 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 338mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Image |
MUN2216T1G
ONSEMICON
35800
1.88
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MUN2216T1G
ON/ST
14000
2.61
CIS Ltd (CHECK IC SOLUTION LIMITED)
MUN2216T1G
ON/CMD
8741
3.34
ONSTAR ELECTRONICS CO., LIMITED
MUN2216T1G
ON/SANYO
188232
4.07
Cicotex Electronics (HK) Limited
MUN2216T1G
ONSEM
22658
4.8
N&S Electronic Co., Limited