Part Number | MTY100N10E |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ON Semiconductor |
Description | MOSFET N-CH 100V 100A TO-264 |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 378nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10640pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 50A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-264 |
Package / Case | TO-264-3, TO-264AA |
Image |
MTY100N10E
ONSEMICON
10000
0.99
Shenzhen Chuanlan Electronics Ltd
MTY100N10E
ON/ST
14888
1.96
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTY100N10E
ON/CMD
1000
2.93
MY Group (Asia) Limited
MTY100N10E
ON/SANYO
16000
3.9
Finestock Electronics HK Limited
MTY100N10E
ONSEM
3260
4.87
ONSTAR ELECTRONICS CO., LIMITED