(5/5) based on 20 customer reviews
Description
DATASHEET MTP12P10G . AYWW. 1. Gate. 3. Source. 4. Drain. 2. Drain. Preferred devices are recommended choices for future use and best overall value. MTP12P10G . TO Feb 18, 2010 MTP12P10G . MTP20N15E. MTP20N15EG. MTP23P06V. MTP23P06VG. MTP2P50E. MTP2P50EG. MTP50P03HDL. MTP50P03HDLG. Jul 1, 2009 MR2835SKG. Z5W27V. KEC. MTP10N10ELG none. None Available. MTP12P10G none. None Available. MTP23P06VG none. None Available. Jun 27, 2007 MTP12P10G . LM2576TV-3.3. LM2576TV-3.3G. MTP12P10. MTP12P10G . LM2576TV-ADJ. LM2576TV-ADJG. MUN2113T1. MUN2113T1G. Jun 19, 2009 MR856G. ON Semiconductor. MR856RL. MR856RLG. ON Semiconductor. MTP10N10ELG. None Available. N/A. MTP12P10G . None Available.
| Part Number | MTP12P10G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET P-CH 100V 12A TO220AB |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 6A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
MTP12P10G
ONSEMICON
32500
0.74
CIS Ltd (CHECK IC SOLUTION LIMITED)
MTP12P10G
ON/ST
3872
1.7425
Belt (HK) Electronics Co
MTP12P10G
ON/CMD
3260
2.745
ONSTAR ELECTRONICS CO., LIMITED
MTP12P10G
ON/SANYO
610
3.7475
FLOWER GROUP(HK)CO.,LTD
MTP12P10G
ONSEM
87500
4.75
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
