Part Number | MT47H512M4THN-25E:M |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | ON Semiconductor |
Description | IC SDRAM 2GBIT 400MHZ 63FBGA |
Series | - |
Packaging | Tape & Reel (TR) |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 2Gb (512M x 4) |
Clock Frequency | 400MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | 0°C ~ 85°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 63-TFBGA |
Supplier Device Package | 63-FBGA (8x10) |
Image |
MT47H512M4THN-25E:M
ONSEMICON
22000
1.2
Global HY Electronics Technology (HK) Co., Limited
MT47H512M4THN-25E:M
ON/ST
10000
2.5375
Bostock HK Limited
MT47H512M4THN-25E:M TR
ON/CMD
10600
3.875
Hong Kong Capital Industrial Co.,Ltd
MT47H512M4THN-25E:M
ON/SANYO
36911
5.2125
Innovation Best Electronics Technology Limited
MT47H512M4THN-25E:M
ONSEM
4851
6.55
WIN AND WIN ELECTRONICS LIMITED