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Description
DATASHEET April, 2007 Rev. 4. 1. Publication Order Number: MPSA13 /D. MPSA13 , MPSA14. MPSA14 is a Preferred Device. Darlington Transistors. NPN Silicon. Features. July 2007. MPSA13 . NPN Darlington Transistor. This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. MPSA13 . NPN EPITAXIAL SILICON TRANSISTOR www.unisoniC.Com.tw. 1 of 3. Copyright The UTC MPSA13 is a Darlington transistor. . FEATURES. MPSA13 . MPSA14. SILICON. NPN DARLINGTON TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon NPN MPSA13 . MPSA14. MPSA27. GROSS DIE PER 4 INCH WAFER. 15,165. PROCESS CP307. Small Signal Transistor. NPN - Silicon Darlington Transistor Chip.
| Part Number | MPSA13 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN DARL 30V 1.2A TO-92 |
| Series | - |
| Packaging | Bulk |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 1.2A |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Power - Max | 625mW |
| Frequency - Transition | 125MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Image |  |
MPSA13
ONSEMICON
802
1.67
HK HEQING ELECTRONICS LIMITED
MPSA13
ON/ST
3096
2.21
Hongkong Dasenic Electronic Limited
MPSA13
ON/CMD
20000
2.75
Belt (HK) Electronics Co
MPSA13
ON/SANYO
39800
3.29
KST Components Limited
MPSA13
ONSEM
12500
3.83
ShenZhen Yuxin Technology Co.,Ltd
