Part Number | MMUN2230LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 246MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
Hot Offer
MMUN2230LT1G
ONSEM
359
6.64
Anders int'l (HK) Limited
MMUN2230LT1G
ONSEMICON
516
1.84
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MMUN2230LT1G
ON/ST
2134
3.04
ONSTAR ELECTRONICS CO., LIMITED
MMUN2230LT1G
ON/CMD
2767
4.24
Bonase Electronics (HK) Co., Limited
MMUN2230LT1G
ON/SANYO
8542
5.44
N&S Electronic Co., Limited