Part Number | MMUN2212LT1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS NPN 246MW SOT23-3 |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
MMUN2212LT1
ONSEMICON
200
0.36
Splendent Technologies Pte Ltd
MMUN2212LT1
ON/ST
8000
0.985
MY Group (Asia) Limited
MMUN2212LT1
ON/CMD
865
1.61
Dan-Mar Components Inc.
MMUN2212LT1
ON/SANYO
3260
2.235
ONSTAR ELECTRONICS CO., LIMITED
MMUN2211LT1G
ONSEM
3000
2.86
Yingxinyuan INT'L (Group) Limited