Part Number | MMUN2131LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 246MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | 2.2k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
MMUN2131LT1G
ONSEMICON
100000
0.5
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
MMUN2131LT1G
ON/ST
6300
1.175
SUMMER TECH(HK) LIMITED
MMUN2131LT1G
ON/CMD
55300
1.85
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MMUN2131LT1G
ON/SANYO
13501
2.525
ATLANTIC TECHNOLOGY LIMITED
MMUN2131LT1G
ONSEM
83000
3.2
Yingxinyuan INT'L (Group) Limited