Part Number | MMUN2130LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Brand | ON Semiconductor |
Description | TRANS PREBIAS PNP 246MW SOT23-3 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 1k |
Resistor - Emitter Base (R2) (Ohms) | 1k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
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MMUN2130LT1G
ONSEMICON
16000
0.98
Finestock Electronics HK Limited
MMUN2130LT1G
ON/ST
55300
1.79
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MMUN2130LT1G
ON/CMD
14000
2.6
CIS Ltd (CHECK IC SOLUTION LIMITED)
MMUN2130LT1G
ON/SANYO
11918
3.41
Viassion Technology Co., Limited
MMUN2130LT1G
ONSEM
12000
4.22
Yingxinyuan INT'L (Group) Limited