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Description
Oct 15, 2009 Final Product/Process Change Notification #16346. RELIABILITY DATA SUMMARY: MMFT960T1G (MOSFET) 3 separate assembly lots. Dec 7, 2006 BSP52T3G. PZT651T1G. MMJT9410T1G. MMFT960T1G . MCR08BT1G. NTF3055L175T1G. MMJT9435T3G. NTF3055-100T3G. MAC08MT1G. Page 1. Single Supply Op Amp. Design Techniques. March 2001. Mixed Signal Products. Application. Report. SLOA030A. Page 2. IMPORTANT NOTICE. Apr 2, 2007 MMFT960T1G . MMJT350T1. MMJT350T1G. MMJT9410T1. MMJT9410T1G. MMJT9435T1. MMJT9435T1G. MMJT9435T3. MMJT9435T3G. Jun 27, 2007 MMFT960T1G . CS51412EDR8. CS51412EDR8G. MMFT960T1. MMFT960T1G . CS51412GD8. CS51412GD8G. MMSZ15ET1. MMSZ15ET1G.
| Part Number | MMFT960T1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 60V 300MA SOT223 |
| Series | - |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 65pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 1A, 10V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Image |  |
MMFT960T1G
ONSEMICON
950
0.76
Sino Star Electronics (HK) Co.,Limited
MMFT960T1G
ON/ST
5
1.8
ICK Internation (HK) Co., Limited
MMFT960T1G
ON/CMD
11025
2.84
CIS Ltd (CHECK IC SOLUTION LIMITED)
MMFT960T1G
ON/SANYO
2000
3.88
Yingxinyuan INT'L (Group) Limited
MMFT960T1G
ONSEM
16000
4.92
Finestock Electronics HK Limited
