Description
DATASHEET xx = GM for MMBTA56LT1G ,. SMMBTA56LT1G. M. = Date Code*. G. = Pb-Free Package. (Note: Microdot may be in either location). MARKING DIAGRAM. Sep 10, 2015 MMBT2907ALT1G. MMBTA63LT1G. MMBT2907ALT1G. MMBTA56LT3G. MMBT2907ALT1G. MMBTA56LT1G . MMBT2907ALT1G Aug 10, 2016 Cree. MHBAWT-0000-000N0BD265E. No. Yes. Q1. 1. PNP Bipolar Transistor SMD. N/A. N/A. SOT-23. ON Semiconductor. MMBTA56LT1G . No. V(BR)CEO. Min (V). hFE Min. hFE Max. fT Min. (MHz). PTM Max. (W). Package. Type. MMBTA56LT1G . AEC. Qualified. Pb-free. Halide free. Active. PNP. General . Oct 16, 2007 5/1/08. K. MMBTA55LT1. 5/1/08. K. MMBTA55LT1G. 5/1/08. K. MMBTA55LT3. 5/1 /08. K. MMBTA55LT3G. 5/1/08. K. MMBTA56LT1G . 5/1/08. K.
Part Number | MMBTA56LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP 80V 0.5A SOT23 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
Power - Max | 225mW |
Frequency - Transition | 50MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
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