Part Number | MMBT6517LT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 350V 0.1A SOT23 |
Series | - |
Packaging | |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 50mA, 10V |
Power - Max | 225mW |
Frequency - Transition | 200MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
MMBT6517LT1G
ONSEMICON
3000
1.46
HK HEQING ELECTRONICS LIMITED
MMBT6517LT1G
ON/ST
35200
2.5625
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MMBT6517LT1G
ON/CMD
3000
3.665
Belt (HK) Electronics Co
MMBT6517LT1G
ON/SANYO
24000
4.7675
N&S Electronic Co., Limited
MMBT6517LT1G
ONSEM
11150
5.87
N&S Electronic Co., Limited