Description
MMBT2222AT -7-F. Active. AEC-Q101. 1P. 7. 8. 3,000. Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) Jan 1, 2013 MMBT2222AT . NPN General. Purpose Amplifier. Features. Capable of 150mWatts of Power Dissipation. Operating and Storage Junction Complementary NPN Type: MMBT2222AT . . Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2). . Halogen and Antimony Free. Green Device (Note 3). JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. SOT-523 Plastic-Encapsulate Transistors. MMBT2222AT TRANSISTOR (NPN). FEATURES. Aug 29, 2002 MMDT2222A. BAS70W-06. BSS138. DDTC115TUA. MMBT2222A. MMDT2227. BAS70WS. BSS138DW. DDTC123ECA. MMBT2222AT -01.
Part Number | MMBT2222AT |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 40V 0.6A SOT523F |
Series | - |
Packaging | Cut Tape (CT) |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
Power - Max | 250mW |
Frequency - Transition | 300MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Image |
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