(5/5) based on 3 customer reviews
Description
MJW21196 (NPN). Silicon Power Transistors. The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power Page 1. (On Heatsink). T2. MJW21196 . 100N. F. C. 7. 10 F. C. 5+. 27K. R. 7. 22K . R. 6. V out. D. 3. V in. D. 2. 0,010 F. C. 3. 0,010 F. C. 2. 1 F. C. 1+. 1K. V. R. 1. Page 1. (On Heatsink). T2. MJW21196 . 100NF. C7. 10 F. C5+. 27K. R7. 22K. R6. V out. D3. V in. D2. 0,010 F. C3. 0,010 F. C2. 1 F. C1+. 1K. VR1. 3k9. R5. 82. Rating. Symbol. Value. Unit. Collector Emitter Voltage. VCEO. 250. Vdc. Collector Base Voltage. VCBO. 400. Vdc. Emitter Base Voltage. VEBO. 5. Vdc. Nov 8, 2001 DISCLAIMER: Final Product/Process Change Notification (FPCN) - Final Notification completing the notification process. Distributed at least 60
| Part Number | MJW21196 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 250V 16A TO247 |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 16A |
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.2A, 16A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8A, 5V |
| Power - Max | 200W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Image |  |
MJW21196
ONSEMICON
8000
0.87
MY Group (Asia) Limited
MJW21196
ON/ST
93002
1.945
Global HY Electronics Technology (HK) Co., Limited
MJW21196
ON/CMD
3260
3.02
ONSTAR ELECTRONICS CO., LIMITED
MJW21196
ON/SANYO
8000
4.095
E-Core Electronics Co.
MJW21196
ONSEM
29390
5.17
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
