Description
DATASHEET The MJE5850, MJE5851 and the MJE5852 transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. MJE5851 : 8.0 A, 350 V PNP Bipolar Power Transistor. For complete documentation, see the data sheet. Product Description. The MJE5850, MJE5851 and the Jul 31, 2001 MJE3439. MJE344. MJE350. MJE5730. MJE5731. MJE5731A. MJE5850. MJE5851 . MJE5852. MJEC15030WP. MJEC15031WP. MJEC340WP. MJE5851 . , MJE5852. , MJE700. , MJE702. MJE703. , MJE800. , MJE802. , MJE803. MJE9780. , MJEC15030WP , MJEC15031WP , MJEC172WP. MJEC340WP MJE5851 . , MJE5852. , MJE700. , MJE702. MJE703. , MJE800. , MJE802. , MJE803. MJE9780. , MJEC15030WP , MJEC15031WP , MJEC172WP. MJEC340WP
Part Number | MJE5851 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP 350V 8A TO220AB |
Series | SWITCHMODE |
Packaging | PNP |
Transistor Type | Tube |
Current - Collector (Ic) (Max) | 8A |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 8A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5A, 5V |
Power - Max | 80W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
MJE5851
ONSEMICON
91
0.05
Shenzhen Gennyue Electronic Technology Co., Ltd
MJE5851 MJE5852
ON/ST
13000
1.13
CIS Ltd (CHECK IC SOLUTION LIMITED)
MJE5851
ON/CMD
8000
2.21
MY Group (Asia) Limited
MJE5851
ON/SANYO
8750
3.29
ONSTAR ELECTRONICS CO., LIMITED
MJE5851
ONSEM
10308
4.37
Viassion Technology Co., Limited