Description
DATASHEET MJE5730, MJE5731,. MJE5731A . High Voltage PNP Silicon. Plastic Power Transistors. These devices are designed for line operated audio output amplifier,. MJE5731A : PNP Bipolar Power Transistor. For complete documentation, see the data sheet. Product Description. The Bipolar Power Transistor is designed for Jul 31, 2001 MJE3439. MJE344. MJE350. MJE5730. MJE5731. MJE5731A . MJE5850. MJE5851. MJE5852. MJEC15030WP. MJEC15031WP. MJEC340WP. MJE5731A . , MJE5740. , MJE5742. , MJE5850. MJE5851. , MJE5852. , MJE700. , MJE702. MJE703. , MJE800. , MJE802. , MJE803. MJE9780. , MJEC15030WP MJE5731A . , MJE5740. , MJE5742. , MJE5850. MJE5851. , MJE5852. , MJE700. , MJE702. MJE703. , MJE800. , MJE802. , MJE803. MJE9780. , MJEC15030WP
Part Number | MJE5731A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP 375V 1A TO220AB |
Series | - |
Packaging | Tube |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 375V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 1A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 300mA, 10V |
Power - Max | 40W |
Frequency - Transition | 10MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
MJE5731A
ONSEMICON
3000
0.15
ONSTAR ELECTRONICS CO., LIMITED
MJE5731A
ON/ST
8000
1.1875
MY Group (Asia) Limited
MJE5731A
ON/CMD
18000
2.225
MASSTOCK ELECTRONICS LIMITED
MJE5731A
ON/SANYO
100
3.2625
Hong Kong Ssit Electronics Co., Limited
MJE5731A
ONSEM
15005
4.3
Pacific Century Co.,Ltd