Description
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be. MJE2955 -G (PNP). RoHS Device. General Purpose Transistor. Page 1. REV:A. Maximum Ratings (at TA=25 C unless otherwise noted). Symbol. Parameter. Electrically Similar to MJE2955 and MJE3055. High Current Gain Bandwidth Product. Epoxy Meets UL 94 V 0 @ 0.125 in. NJV Prefix for Automotive and Jan 1, 2013 MJE2955 . PNP Silicon. Plastic-Encapsulate. Transistor. Features. Capable of 2.0Watts of Power Dissipation. Collector-current 10A. This Power MOSFET is the latest development of. STMicroelectronics unique Single Feature. Size strip-based process. The resulting transistor shows
Part Number | MJE2955 |
Brand | ON Semiconductor |
Image |
MJE2955
ONSEMICON
30500
0.9
Shenzhen Epamic Technology Co., Limited
MJE2955
ON/ST
6113
1.94
Belt (HK) Electronics Co
MJE2955
ON/CMD
5876
2.98
Analog Technology Limited
MJE2955
ON/SANYO
3000
4.02
Redstar Electronic Limited
mje2955
ONSEM
86700
5.06
Z.H.T TECHNOLOGY HK LIMITED