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Description
The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and SILICON NPN TRANSISTORS. DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE13008 and. MJE13009 are silicon NPN transistors designed for high. The UTC MJE13009 -Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and . MJE13009 . RoHS . FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA
| Part Number | MJE13009 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - Bipolar (BJT) - Single |
| Brand | ON Semiconductor |
| Description | TRANS NPN 400V 12A TO220AB |
| Series | - |
| Packaging | Tube |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 12A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3A, 12A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Power - Max | 2W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Image |  |
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