Description
Datasheet 1. Publication Order Number: MJE13005/D. MJE13005G . SWITCHMODEt Series. NPN Silicon Power. Transistors. These devices are designed for high voltage, 2. 3. MJE13005L-x-TA3-T. MJE13005G -x-TA3-T. TO-220. B. C. E. Tube. MJE13005L-x-TF3-T. MJE13005G -x-TF3-T MJE13005G -x-TMS2-T. TO-251S2. B. C. E. Feb 25, 2010 MJE13005G . MJE13007G. MJE13009G. MJE18002G. MJE18004D2G. MJE18004G. MJE18006G. MJE18008G. MJE5742G. NJVMJE15031G. (Continued). R1. MJE13005. NPN SILICON. POWER TRANSISTOR. JEDEC TO- 220 CASE. DATA SHEET. DESCRIPTION. The CENTRAL SEMICONDUCTOR Oct 13, 2011 MJE13005G . TIP29BG. BD242CG. MJE13007G. TIP29CG. BD243CG. MJE13009G. TIP30CG. BD244BG. MJE15028G. TIP31AG. BD244CG.
Part Number | MJE13005G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN 400V 4A TO220AB |
Series | SWITCHMODE |
Packaging | NPN |
Transistor Type | Tube |
Current - Collector (Ic) (Max) | 4A |
Voltage - Collector Emitter Breakdown (Max) | 400V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 4A |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A, 5V |
Power - Max | 2W |
Frequency - Transition | 4MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
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MJE13005G
ONSEMICON
2500
1.54
HK HEQING ELECTRONICS LIMITED
MJE13005G
ON/ST
5710
2.41
ONSTAR ELECTRONICS CO., LIMITED
MJE13005G
ON/CMD
6398
3.28
Ande Electronics Co., Limited
MJE13005G
ON/SANYO
1000
4.15
Ysx Tech Co., Limited
MJE13005G
ONSEM
8000
5.02
MY Group (Asia) Limited