Part Number | MJD112-1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 100V 2A IPAK |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-Pak |
Image |
MJD112-1G
ONSEMICON
6000
0.89
ZY (HK) TECHNOLOGY LIMITED
MJD112-1G
ON/ST
9000
1.615
SUMMER TECH(HK) LIMITED
MJD112-1G
ON/CMD
57200
2.34
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
MJD112-1G
ON/SANYO
14886
3.065
ATLANTIC TECHNOLOGY LIMITED
MJD112-1G
ONSEM
2594
3.79
Nosin (HK) Electronics Co.