Part Number | MJD112-001 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 100V 2A IPAK |
Series | - |
Packaging | Tube |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package | I-Pak |
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MJD112-001
ONSEMICON
8000
0.22
MY Group (Asia) Limited
MJD112-001
ON/ST
3260
1.395
ONSTAR ELECTRONICS CO., LIMITED
MJD112001
ON/CMD
15064
2.57
Shenzhen Shengyu Electronics Technology Limited
MJD112001
ON/SANYO
1175
3.745
ABBI Electronics Company Limited
MJD112T4
ONSEM
2500
4.92
Pacific Corporation