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Part Number | MJ 11016G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 120V 30A TO3 |
Series | - |
Packaging | Tray |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 30A |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
Power - Max | 200W |
Frequency - Transition | 4MHz |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
Image | ![]() |
MJ11016G
ONSEMICON
5991
1.84
CIS Ltd (CHECK IC SOLUTION LIMITED)
MJ11016G
ON/ST
3650
2.5375
Ande Electronics Co., Limited
MJ11016G
ON/CMD
9370
3.235
MY Group (Asia) Limited
MJ11016G
ON/SANYO
7878
3.9325
M-Star International Trading Co.,Ltd.
MJ11016G
ONSEM
9286
4.63
M-Star International Trading Co.,Ltd.