Description
Datasheet Preferred devices are recommended choices for future use and best overall value. MJ11015. TO-3. 100 Units/Tray. MJ11015G . TO-3. (Pb-Free). 100 Units/ Tray. Sep 24, 2010 NJVMJB42CT4G. 2N4922G. MJ11012G. NJVMJD112T4G. 2N4923G. MJ11015G . NJVMJD117T4G. 2N5190G. MJ11016G. NJVMJD122T4G. Dec 28, 2005 MC79L15ACPRPG MJ11015G . MJ15024. MC78L18ACPRAG MC79L18ABPRP. MJ11016. MJ15024G. MC78L18ACPRM MC79L18ABPRPG. Apr 29, 2009 MJ11015G . MJ11016G. MJ11021G. MJ11022G. MJ11028. MJ11028G. MJ11030G. MJ11032. MJ11032G. MJ11033. MJ11033G. MJ14001G. Jan 21, 2010 MJ11015G . ON Semiconductor. MJ11028. MJ11028G. ON Semiconductor. MJ11032. MJ11032G. ON Semiconductor. MJ11033. MJ11033G.
Part Number | MJ11015G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS PNP DARL 120V 30A TO3 |
Series | - |
Packaging | Tray |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 30A |
Voltage - Collector Emitter Breakdown (Max) | 120V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
Power - Max | 200W |
Frequency - Transition | 4MHz |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
Image |
MJ11015G
ONSEMICON
1000
1
Hong Kong Yulu International Limited
MJ11015G
ON/ST
500
1.51
HK HEQING ELECTRONICS LIMITED
MJ11015G
ON/CMD
5000
2.02
Redstar Electronic Limited
MJ11015G
ON/SANYO
1000
2.53
HK FEILIDI ELECTRONIC CO., LIMITED
MJ11015G
ONSEM
1042
3.04
NEW IDEAS INDUSTRIAL CO., LIMITED