Part Number | MJ11012G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ON Semiconductor |
Description | TRANS NPN DARL 60V 30A TO-3 |
Series | - |
Packaging | Tray |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 30A |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
Power - Max | 200W |
Frequency - Transition | 4MHz |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
Image |
MJ11012G
ONSEMICON
1000
1.05
Hong Kong Yulu International Limited
MJ11012G
ON/ST
9201
2.01
ONSTAR ELECTRONICS CO., LIMITED
MJ11012G
ON/CMD
14000
2.97
MY Group (Asia) Limited
MJ11012G
ON/SANYO
344
3.93
ABBI Electronics Company Limited
MJ11012G
ONSEM
16800
4.89
CIS Ltd (CHECK IC SOLUTION LIMITED)