(5/5) based on 9 customer reviews
Description
(Note: Microdot may be in either location). *Date Code orientation and/or overbar may vary depending upon manufacturing location. MGSF1N03LT1G . SOT-23. Oct 23, 2015 MGSF1N03LT1G . NO. Yes. Q1. 1. N-CHANNEL MOS FET. MGSF1N03LT1G . -. SOT23. On Semiconductor. MGSF1N03LT1G . NO. Yes. Q2. 1. Oct 17, 2012 ON Semiconductor is notifying customers of its plan to transfer its High Cell Density HD1 MOSFETs from the ON Semiconductor fab located in Abstract. The article describes new SPICE and SABER simulation models which contain a dynamic link between electrical and thermal component descriptions. Sep 16, 2016 INCHES. MILLIMETERS. DIM MIN. NOM. MAX. MIN. NOM. MAX. A. 0.89. 1.00. 1.11. 0.035 0.039 0.044. A1. 0.01. 0.06. 0.10. 0.000 0.002 0.004.
| Part Number | MGSF1N03LT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ON Semiconductor |
| Description | MOSFET N-CH 30V 1.6A SOT-23 |
| Series | - |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 5V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta) |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Hot Offer
MGSF1N03LT1G
ONSEMICON
3500
0.56
LET ELECTRONICS CO LIMITED
MGSF1N03LT1G
ON/ST
8940
1.945
ONSTAR ELECTRONICS CO., LIMITED
MGSF1N03LT1G
ON/CMD
90001
3.33
Shenzhen High Quality Electronic Semiconductor Co., Ltd
MGSF1N03LT1G
ON/SANYO
24000
4.715
HK DANSONGDA ELECTRONIC TECHNOLOGY LIMITED
MGSF1N03LT1G
ONSEM
6500
6.1
Yuhua Technology Co.,Limited
