Description
by MGP4N60ED /D. MOTOROLA. SEMICONDUCTOR TECHNICAL DATA. MGP4N60ED . IGBT & DIODE IN TO 220. 4.0 A @ 90 C. 6.0 A @ 25 C. 600 VOLTS. MGP4N60E . 2. Motorola IGBT Device Data. ELECTRICAL CHARACTERISTICS ( TJ = 25 C unless otherwise noted). Characteristic. Symbol. Min. Typ. Max. Unit. PART #. REPLACEMENT/Supplier. MGP4N60E SGP04N60/Siemens. MGP4N60ED IRG4BC10UD/International Rectifier. MGP7N60E SGP06N60/ Siemens. MGP4N60E . , MGP4N60ED , MGP7N60E. , MGP7N60ED. MGS05N60D , MGS13002D , MGW12N120 , MGW12N120D. MGW14N60ED , MGW20N120 There are six MGP4N60ED IGBTs (copack; with built-in fly back diode) driven by three IR2112 high voltage gate drivers. Switching times, saturation voltage, and
Part Number | MGP4N60ED |
Brand | ON Semiconductor |
Image |
MGP4N60ED
ONSEMICON
8000
1.77
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