Description
Nov 28, 2013 This device is an N-channel Power MOSFET developed using the second generation of. MDmesh technology. This revolutionary Power. Thermal Resistance, Junction to Case. R JC. 83.3. C/W. Stresses exceeding Maximum Ratings may damage the device. Maximum. Ratings are stress ratings
Part Number | MDF11N60 |
Brand | ON Semiconductor |
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MDF11N60
ONSEMICON
10000
0.89
Ysx Tech Co., Limited
MDF11N60
ON/ST
100
1.9775
RX ELECTRONICS LIMITED
MDF11N60
ON/CMD
5000
3.065
Yingxinyuan INT'L (Group) Limited
MDF11N60
ON/SANYO
22246
4.1525
N&S Electronic Co., Limited
MDF11N60
ONSEM
4
5.24
Cicotex Electronics (HK) Limited