Description
30. -. 1.0. Description and Applications. The MBR2545CT & MBR2560CT are designed to meet the stringent requirements of commercial applications, such as: . PARAMETER. SYMBOL VS-MBR2535CTPbF VS-MBR2535CT-N3 VS- MBR2545CTPbF VS- MBR2545CT -N3 UNITS. Maximum DC reverse voltage. VR. 35. 35. in accordance to WEEE 2002/96/EC. MECHANICAL DATA. Case: TO-220AB. Polarity: As marked. MBR2545CT -Y thru MBR25150CT-Y. Dual Common Cathode 6 (5) kgf cm. (lbf in) maximum. 12 (10). Marking device. Case style D2PAK. MBRB2535CT. MBRB2545CT. Case style TO-262. MBR2535CT-1. MBR2545CT - 1
Part Number | MBR2545CT |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Arrays |
Brand | ON Semiconductor |
Description | DIODE ARRAY SCHOTTKY 45V TO220AB |
Series | - |
Packaging | Tube |
Diode Configuration | 1 Pair Common Cathode |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 45V |
Current - Average Rectified (Io) (per Diode) | 25A |
Voltage - Forward (Vf) (Max) @ If | 820mV @ 25A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 200µA @ 45V |
Operating Temperature - Junction | -65°C ~ 150°C |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220-3 |
Image |
MBR2545CT
ONSEMICON
1254
1.45
Xinye International Technology Limited
MBR2545CT
ON/ST
2600
1.6975
Nosin (HK) Electronics Co.
MBR2545CT
ON/CMD
3702
1.945
Belt (HK) Electronics Co
MBR2545CT
ON/SANYO
5876
2.1925
Analog Technology Limited
MBR2545CT
ONSEM
86700
2.44
Z.H.T TECHNOLOGY HK LIMITED