Description
Schottky Barrier Chip. . Guard Ring Die Construction for Transient Protection. . Low Power Loss, High Efficiency. . High Surge Capability. . High Current The MBRD1035CTL employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction Voltage Rate of Change (Rated VR) dv/dt. 10,000. V/ s. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these Q2 115mW . MOSFET . MBR2545 . 10.8V - 13.2V. MBR2545 . L1. 10 H. Figure 3 12V to 5V with P-MOSFET. No Charge Pump is Needed. FB. NC. SS. CSP. GND. PGND. BDR. TDR. NC. VC1.
Part Number | MBR2545 |
Brand | ON Semiconductor |
Image |
MBR2545
ONSEMICON
5876
1.64
Analog Technology Limited
MBR2545CTG
ON/ST
1100
2.9675
Hongkong Rixin International Trading Company
MBR2545CTG
ON/CMD
26650
4.295
HK TWO L ELECTRONIC LIMITED
MBR2545CT
ON/SANYO
940
5.6225
Pivot Technology Co., Ltd.
MBR2545CTPBF
ONSEM
11550
6.95
Altitek Electronics Inc.